**Product model:** CHT2312PT-VB

**Silk screen:** VB1240

**Brand:** VBsemi

**Parameters:**
- Package type: SOT23-3
- Channel type: N—Channel
- Maximum operating voltage: 20V
- Maximum operating current: 6A
- On resistance (RDS(ON)):
- 24mΩ @ VGS=4.5V
- 24mΩ @ VGS=8V
- Threshold voltage (Vth): 0.45~1V

**Package:** SOT23-3

**Detailed parameter description:**
CHT2312PT-VB is an N-channel field effect transistor (N-Channel MOSFET), in SOT23-3 package. Its main parameters include maximum operating voltage of 20V, maximum operating current of 6A, and low on-resistance (RDS(ON)) performance at different Gate-Source voltages. The threshold voltage (Vth) is in the range of 0.45~1V.

**Application Introduction:**
This MOSFET is suitable for various electronic devices and modules, especially in circuits that need to control current. Due to its N-channel characteristics, it is usually used in applications that amplify, switch and regulate current. It has a wide range of applications in power management, drive circuits and power amplifiers.

**Main application areas and modules:**
1. **Power management module:** Used for power switching and current regulation.
2. **Drive circuit:** Used for switching current and controlling current drive.
3. **Power amplifier module:** Used in amplifiers that require efficient energy consumption.

This MOSFET is suitable for electronic applications that require high performance and reliability, providing flexible current control and switching functions for various circuits.