**UT2312L-AE3-R-VB**

- **Silkscreen: ** VB1240
- **Brand: ** VBsemi
- **Parameters: **
- Package type: SOT23-3
- MOSFET type: N—Channel
- Rated voltage: 20V
- Rated current: 6A
- On-resistance: RDS(ON)=24mΩ @ VGS=4.5V, VGS=8V
- Threshold voltage: Vth=0.45~1V
- **Package: ** SOT23-3

**Detailed parameter description: **

UT2312L-AE3-R-VB is an N-Channel MOSFET in SOT23-3 package. It has a rated voltage of 20V, a rated current of 6A, and low on-state resistance (RDS(ON)) at different gate-source voltages.

- **Electrical characteristics:**
- **Rated voltage (VDS):** 20V
- **Rated current (ID):** 6A
- **On-state resistance (RDS(ON)):** 24mΩ @ VGS=4.5V, VGS=8V
- **Threshold voltage (Vth):** 0.45~1V

**Application introduction:**

UT2312L-AE3-R-VB is suitable for a variety of electronic fields, especially for applications that require N-Channel MOSFET for power control. Here are some possible application areas:

1. **Power module:** Due to its low on-state resistance and moderate current capability, UT2312L-AE3-R-VB can be used to design compact, high-efficiency power modules.

2. **Motor drive:** In applications that require motor control, UT2312L-AE3-R-VB can be used as a power switching element in the motor drive circuit to achieve efficient motor control.

3. **LED drive:** As a switching element in the LED lighting system, UT2312L-AE3-R-VB can help achieve precise brightness control and energy saving.

Please note that the specific application depends on the system requirements and design parameters. It is recommended to select according to the specific scenario and circuit design requirements.