VBsemi UT2308G-AE3-R-VB transistor parameters and application introduction:

**Parameter description:**
- Silk screen: VB1240
- Brand: VBsemi
- Package: SOT23-3
- Type: N-Channel
- Rated voltage: 20V
- Rated current: 6A
- RDS(ON): 24mΩ @ VGS=4.5V, VGS=8V
- Threshold voltage: Vth=0.45~1V

**Application introduction:**
UT2308G-AE3-R-VB is an N-Channel MOSFET in SOT23-3 package. With a rated voltage of 20V and a rated current of 6A, RDS(ON) performs well at different voltages and is suitable for low voltage drop and high efficiency applications.

**Applicable fields and modules:**
1. **Power management module:** Due to the low resistance state (RDS(ON)), it is suitable for designing high-efficiency power switch modules to improve energy utilization.

2. **Current control application:** It can be used in current control modules such as current source, current limiter, etc.

3. **Battery protection module:** In battery management, it can be used to design protection circuits to ensure stable and safe charging and discharging of batteries.

4. **DC-DC converter:** It is suitable for DC-DC converters to achieve high-efficiency energy conversion, especially for portable electronic devices.

The above is the main parameters and application introduction of UT2308G-AE3-R-VB, which can be widely used in electronic fields requiring N-Channel MOSFET, especially in circuit design requiring high efficiency and low voltage drop.