VBsemi HM3416E-VB transistor parameters and application introduction:

**Parameter description:**
- Silk screen: VB1240
- Brand: VBsemi
- Package: SOT23-3
- Type: N-Channel
- Rated voltage: 20V
- Rated current: 6A
- RDS(ON): 24mΩ @ VGS=4.5V, VGS=8V
- Threshold voltage: Vth=0.45~1V

**Application introduction:**
This transistor is suitable for SOT23-3 package and is an N-Channel MOSFET. With a rated voltage of 20V and a rated current of 6A, RDS(ON) performs well at different voltages and is suitable for low voltage drop and high-efficiency applications.

**Applicable fields and modules:**
1. **Power management module:** Due to the low resistance state (RDS(ON)), it can be used to design high-efficiency power switch modules to improve energy utilization.

2. **Current control application:** Applicable to current control modules such as current source, current limiter, etc.

3. **Battery protection module:** In battery management, it can be used to design protection circuits to ensure stable and safe charging and discharging of batteries.

4. **DC-DC converter:** In DC-DC converters, it can be used to achieve high-efficiency energy conversion and is suitable for portable electronic devices.

The above is the main parameters and application introduction of HM3416E-VB, which can be widely used in various electronic fields requiring N-Channel MOSFET, especially circuit design requiring high efficiency and low voltage drop.