BSH105-VB is a VBsemi brand SOT23-3 packaged N-Channel trench field effect transistor. Parameters include: 20V withstand voltage, 6A current, RDS(ON) is 24mΩ (at VGS=4.5V, VGS=8V), and the threshold voltage Vth is between 0.45~1V.

**Detailed parameter description:**
- Withstand voltage: 20V
- Current: 6A
- RDS(ON): 24mΩ @ VGS=4.5V, VGS=8V
- Threshold voltage: 0.45~1V

**Application introduction:**
Suitable for SOT23-3 package application scenarios where N-Channel trench MOSFET is required. Common fields include power management, power amplification, switching power supply, etc.

**Application areas:**
1. **Power management module:** Used to stabilize and manage power output.
2. **Power amplifier module:** Provides efficient power amplification in the amplifier circuit.
3. **Switching power supply:** Used for switching control in switching power supplies.

These transistors can be widely used in electronic devices that require reliable switching and regulation functions.