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PMV117EN-VB is a SOT23-3 packaged N-MOS tube Datasheet parameter video explanati
**VBsemi PMV117EN-VB Detailed parameter description:**

- **Package type:** SOT23-3
- **Transistor type:** N-Channel
- **Channel voltage (VDS):** 30V
- **Channel current (ID):** 6.5A
- **On-resistance (RDS(ON)):** 30mΩ @ VGS=10V, VGS=20V
- **Gate threshold voltage (Vth):** 1.2~2.2V

**Application introduction:**

VBsemi PMV117EN-VB is a high-performance N-channel field effect transistor suitable for a variety of power management and switching power supply applications. Its excellent electrical performance makes it widely used in various fields.

**Main application areas:**

1. **Power management module:** PMV117EN-VB can be widely used in power management modules to provide efficient and stable power for various electronic devices.

2. **Switching power supply:** Suitable for switching power supply design, providing reliable switching control, widely used in communication equipment, computer equipment and other fields.

3. **Battery management system:** In battery management systems that require high current handling and low resistance, ensure efficient operation of the system, such as portable electronic devices.

4. **Drive circuit:** As a key component of the drive circuit, it supports various drive applications such as motor drive and power amplifier.

VBsemi PMV117EN-VB provides efficient solutions in multiple fields through its stable and reliable performance, and is an ideal choice for electronic engineers.

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