**VBsemi AP2306AGN-HF-VB**

- **Silkscreen:** VB1330
- **Brand:** VBsemi
- **Parameters:**
- Package: SOT23-3
- Type: N—Channel
- Rated voltage: 30V
- Rated current: 6.5A
- Switch resistance: RDS(ON)=30mΩ@VGS=10V, VGS=20V
- Gate threshold voltage: Vth=1.2~2.2V

- **Package:** SOT23-3

**Detailed parameter description:**

AP2306AGN-HF-VB is an N-Channel MOSFET with a rated voltage of 30V and a rated current of 6.5A. Under typical operating conditions, the switch resistance is 30mΩ and the gate threshold voltage is 1.2~2.2V. The device is packaged in SOT23-3 and is suitable for a variety of circuit designs.

**Application Introduction:**

AP2306AGN-HF-VB is suitable for applications that require efficient energy switching, especially in low voltage, high current environments. Its low switch resistance and high rated current make it an ideal choice for a variety of power management and switching power supply applications.

**Applicable fields and modules:**

1. **Power management module:** Due to its low switch resistance and high rated current, AP2306AGN-HF-VB is often used in power management modules, including regulators and switching power supplies.

2. **Battery management:** In battery management systems that require efficient energy consumption and compact size, the device can be used for battery charging and discharging control.

3. **DC-DC converter:** Suitable for DC-DC converters to improve the efficiency of power systems.

In general, AP2306AGN-HF-VB has a wide range of applications in circuit designs that require high-performance N-Channel MOSFETs, and is particularly suitable for fields that require efficient energy switching.