**VBsemi ME2318-VB MOSFET**

- **Package type: ** SOT23-3
- **Channel type: ** N-Channel
- **Maximum withstand voltage: ** 30V
- **Maximum continuous drain current: ** 6.5A
- **On-resistance (RDS(ON)): ** 30mΩ @ VGS=10V, VGS=20V
- **Gate threshold voltage (Vth): ** 1.2~2.2V

**Detailed parameter description: **
- **Package type: ** SOT23-3 is a small SMD package suitable for compact space and lightweight design.
- **Channel type: ** N-Channel channel type is usually used in low-side switch configuration.
- **Maximum withstand voltage: ** The maximum drain withstand voltage of 30V makes it suitable for low to medium voltage applications.
- **Maximum continuous drain current:** The current carrying capacity of 6.5A makes it suitable for medium power applications.
- **On-resistance:** The low on-resistance performance of 30mΩ helps to reduce power consumption and improve efficiency.
- **Gate threshold voltage:** The gate threshold voltage of 1.2~2.2V allows flexible driving at different levels.

**Application profile:**
This MOSFET is suitable for various power management, switching power supply and power amplifier applications. Due to its small package and moderate electrical performance, it can be widely used in different fields.

**Typical application areas:**
1. **Power management module:** Used in power switch, power inverter and voltage regulator module.
2. **Battery-powered system:** Suitable for portable devices, mobile communication equipment, etc.
3. **Power conversion module:** Plays a role in DC-DC converters and switching power supplies.
4. **Power amplifier:** Used in audio amplifiers and other low to medium power amplifiers.

Through applications in these fields, ME2318-VB MOSFET can provide reliable performance and efficient power management.