Model: LNTR4003NLT1G-VB

Silk screen: VB1330

Brand: VBsemi

Parameters:
- Package type: SOT23-3
- Channel type: N-Channel
- Rated voltage: 30V
- Rated current: 6.5A
- On-resistance: RDS(ON) = 30mΩ @ VGS=10V, VGS=20V
- Threshold voltage: Vth = 1.2~2.2V

Package: SOT23-3

Detailed parameter description and application introduction:

LNTR4003NLT1G-VB is an N-Channel trench field effect transistor, packaged as SOT23-3. The device has a rated voltage of 30V, a rated current of 6.5A, and a low on-resistance (RDS(ON) = 30mΩ @ VGS=10V, VGS=20V). The threshold voltage Vth is in the range of 1.2~2.2V.

**Application areas:**
1. **Power management module:** Suitable for power switching and regulation circuits to provide efficient power conversion.
2. **Motor drive:** In motor control and drive modules, it is used to achieve efficient motor operation.
3. **LED drive:** In LED lighting applications, it can be used to control and adjust the brightness of LEDs.
4. **Power inverter:** Used to make efficient inverters to convert DC power to AC power.

LNTR4003NLT1G-VB is suitable for a variety of applications requiring high-performance N-Channel trench MOSFETs, including but not limited to the fields mentioned above. Its performance characteristics make it an ideal choice in various electronic systems.