**VBsemi AFN2336AS23RG-VB Detailed parameter description and application introduction: **

**Product model: ** AFN2336AS23RG-VB

**Silk screen: ** VB1330

**Brand: ** VBsemi

**Parameters: **
- **Package type: ** SOT23-3
- **Channel type: ** N-Channel
- **Operating voltage: ** 30V
- **Continuous leakage current: ** 6.5A
- **On-resistance: ** RDS(ON) = 30mΩ @ VGS = 10V, VGS = 20V
- **Gate threshold voltage: ** Vth = 1.2~2.2V

**Package: **
- SOT23-3

**Application Introduction:**
VBsemi's AFN2336AS23RG-VB is an N-Channel trench field effect transistor designed for applications requiring 30V operating voltage and 6.5A continuous leakage current. Its low on-resistance (RDS(ON) = 30mΩ) performs well at gate voltages of 10V and 20V. The gate threshold voltage (Vth) is in the range of 1.2~2.2V, providing design flexibility in different application scenarios.

**Main Features:**
1. **Low on-resistance:** RDS(ON) = 30mΩ @ VGS = 10V, VGS = 20V.
2. **Wide operating voltage range:** The 30V operating voltage is suitable for a variety of power supply voltages.
3. **Suitable for a variety of application scenarios:** With flexible gate threshold voltage, it can achieve optimal performance in different application scenarios.

**Application fields:**
VBsemi AFN2336AS23RG-VB is suitable for a variety of fields and modules, including but not limited to:
1. **Power management module:** Due to its low on-resistance and adaptable gate threshold voltage, it can be used for power switching and regulation circuits.
2. **Motor drive module:** Suitable for applications requiring efficient energy conversion and motor control.
3. **LED lighting:** Can be used in LED drive circuits to improve energy efficiency.

VBsemi AFN2336AS23RG-VB provides reliable power switching solutions for various electronic devices and modules with its excellent performance and applicability.