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NK3018-VB is a SOT23-3 packaged N-MOS tube. Datasheet parameter video explanatio
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**VBsemi NK3018-VB Detailed parameter description and application introduction:**

**Product model:** NK3018-VB

**Silk screen:** VB1330

**Brand:** VBsemi

**Parameters:**
- **Package type:** SOT23-3
- **Channel type:** N-Channel
- **Operating voltage:** 30V
- **Continuous leakage current:** 6.5A
- **On-resistance:** RDS(ON) = 30mΩ @ VGS = 10V, VGS = 20V
- **Gate threshold voltage:** Vth = 1.2~2.2V

**Package:**
- SOT23-3

**Application introduction:**
VBsemi's NK3018-VB is an N-Channel trench field effect transistor with an operating voltage of 30V and a continuous leakage current of 6.5A. Its low on-resistance (RDS(ON) = 30mΩ) performs well at gate voltages of 10V and 20V. The gate threshold voltage is in the range of 1.2~2.2V, making it suitable for a variety of application scenarios.

**Main Features:**
1. **Low on-resistance:** RDS(ON) = 30mΩ @ VGS = 10V, VGS = 20V.
2. **Wide operating voltage range:** The 30V operating voltage is suitable for a variety of power supply voltages.
3. **Suitable for a variety of application scenarios:** With flexible gate threshold voltage, it can achieve optimal performance in different application scenarios.

**Application fields:**
VBsemi NK3018-VB is suitable for a variety of fields and modules, including but not limited to:
1. **Power management module:** Due to its low on-resistance and adaptable gate threshold voltage, it can be used for power switching and regulation circuits.
2. **Motor drive module:** Suitable for applications requiring efficient energy conversion and motor control.
3. **LED lighting:** Can be used in LED drive circuits to improve energy efficiency.

VBsemi NK3018-VB provides a reliable power switch solution for various electronic devices and modules with its excellent performance and applicability.

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