**VBsemi UT3400G-AE3-R-VB detailed parameter description and application introduction**

**Parameter Description:**
- **Package Type:** SOT23-3
- **Channel Type:** N—Channel
- **Maximum Drain Current:** 6.5A
- **Drain-Source Voltage:** 30V
- **On-Resistance:** RDS(ON) = 30mΩ @ VGS=10V, VGS=20V
- **Gate-Source Threshold Voltage:** Vth = 1.2~2.2V

**Application Introduction:**
UT3400G-AE3-R-VB is an N—Channel field effect transistor launched by VBsemi. It adopts SOT23-3 package and has excellent performance parameters. It is suitable for a variety of circuit applications.

**Fields and module applications:**
1. **Power management module:**
- Due to its low on-resistance and high leakage current, UT3400G-AE3-R-VB is widely used in power management modules, especially for power switching and current control.

2. **Consumer electronics:**
- In consumer electronics, UT3400G-AE3-R-VB is suitable for power management, charging circuits and other power control applications.

3. **Communication equipment:**
- Due to its high performance, UT3400G-AE3-R-VB can be applied to power amplification and signal processing circuits in communication equipment.

4. **Power tools:**
- In the field of power tools, UT3400G-AE3-R-VB can be used in key modules such as battery management and motor control.

Overall, UT3400G-AE3-R-VB provides a reliable power switching solution suitable for circuit designs that require efficient energy consumption and compact packaging, covering application requirements in multiple fields.