HM3406B-VB Silkscreen: VB1330 Brand: VBsemi

**Detailed parameter description:**
- Package type: SOT23-3
- Channel type: N-Channel
- Maximum drain voltage: 30V
- Maximum drain current: 6.5A
- Static drain-source resistance (RDS(ON)): 30mΩ @ VGS=10V, VGS=20V
- Gate threshold voltage (Vth): 1.2~2.2V

**Application introduction:**
HM3406B-VB is an N-Channel field effect transistor (FET) in SOT23-3 package. Its design focuses on providing low drain resistance and high drain current, suitable for a variety of electronic application scenarios.

**Application areas:**
1. **Power management module:** HM3406B-VB can be used in power management modules to improve power efficiency by effectively controlling power output.

2. **Current control module:** Suitable for circuits that require effective control of current, such as current sources, current control modules, etc.

3. **Switching power supply:** In switching power supplies, HM3406B-VB can be used to control current flow, helping to achieve efficient energy conversion.

4. **Battery management system:** Due to its low resistance and high current capability, it can be used in battery management systems to help manage and control the battery charging and discharging process.

5. **Low voltage disconnect switch:** Suitable for circuits that require a low voltage disconnect switch with a moderate gate threshold voltage.

Through these characteristics, HM3406B-VB can be widely used in various electronic devices and modules that require N-Channel field effect transistors, providing reliable and high-performance solutions for circuits.