**VBsemi UTD351G-AE3-R-VB**

- **Parameter Description:**
- Package Type: SOT23-3
- Channel Type: N-Channel
- Maximum Withstand Voltage: 30V
- Maximum Current: 6.5A
- Turn-on Voltage (Gate-source Voltage): Vth=1.2~2.2V
- Turn-on Resistance: RDS(ON)=30mΩ @ VGS=10V, VGS=20V

- **Application Introduction:**
- **SOT23-3 Package:** Small, suitable for electronic applications in compact spaces.
- **N-Channel Design:** Suitable for circuits requiring N-type field effect transistors.
- **Medium Voltage, High Current:** Suitable for power management applications that require larger currents under medium voltage conditions.
- **Low on-resistance:** Provides lower on-resistance, which helps improve circuit performance.

- **Field and module application:**
- **Power management module:** Due to its N-Channel design and large current capability, it can be used in medium voltage power management modules.
- **Motor drive:** Suitable for motor drive circuits that need to control large currents.
- **Power inverter:** Used to build medium power DC to AC power inverters.
- **LED drive:** Due to its low on-resistance, it can be used in LED drive circuits to improve efficiency.

This VBsemi UTD351G-AE3-R-VB field effect transistor is suitable for a variety of power management and power control applications, especially in scenarios with high current requirements under medium voltage conditions.