VBsemi CES2316-VB is an N-Channel field effect transistor in SOT23-3 package. The following are detailed parameter descriptions and application profiles:

- Rated voltage (VDS): 30V
- Rated current (ID): 6.5A
- On-state resistance (RDS(ON)): 30mΩ @ VGS=10V, VGS=20V
- Threshold voltage (Vth): 1.2~2.2V

Application profile:
This device is suitable for various power management and switching circuit applications. Due to its N-Channel characteristics, it is usually used in power switches, drive circuits and other circuits that require N-Channel MOSFETs.

Field and module application:
1. Power switch: a switch used to control circuits, such as DC-DC converters.
2. Drive circuit: used as a switching element in electronic devices, such as motor drivers, LED drivers, etc.

Please note that the specific application should be adjusted according to project requirements and design specifications.