Product model: SI2319ADS-T1-GE3-VB
Silk screen: VB2355
Brand: VBsemi
Parameters:
- Package type: SOT23-3
- Channel type: P-Channel
- Maximum drain voltage: -30V
- Maximum drain current: -5.6A
- On resistance: RDS(ON) = 47mΩ @ VGS=10V, VGS=20V
- Threshold voltage: Vth = -1V

Application introduction:
SI2319ADS-T1-GE3-VB is a P-Channel channel SOT23-3 package field effect transistor. Its features include low leakage resistance at VGS=10V and VGS=20V, suitable for circuits requiring P-Channel channel field effect transistors.

Main application areas:
This product is suitable for various electronic devices and modules, especially in circuits that require P-Channel field effect transistors. Common application areas include power amplifiers, switching power supplies, power management, etc.

Please note: When using this product, please read its data sheet carefully to ensure correct use and application.