TM3401GN-VB Silkscreen: VB2355 Brand: VBsemi

**Detailed parameter description:**
- Package type: SOT23-3
- Channel type: P-Channel
- Maximum drain voltage: -30V
- Maximum drain current: -5.6A
- Static drain-source resistance (RDS(ON)): 47mΩ @ VGS=10V, VGS=20V
- Gate threshold voltage (Vth): -1V

**Application introduction:**
TM3401GN-VB is a P-Channel channel SOT23-3 package field effect transistor (FET). It has the characteristics of low drain resistance and high drain current, suitable for a variety of application scenarios.

**Application areas:**
1. **Power management module:** Due to its low drain resistance and moderate drain current, TM3401GN-VB can be used in power management modules to help effectively control the output of the power supply.

2. **Current control module:** Suitable for circuits that require effective control of current, such as current sources, current control modules, etc.

3. **Switching power supply:** In switching power supplies, TM3401GN-VB can be used to control the flow of current and help achieve efficient energy conversion.

4. **Battery management system:** Due to its low resistance and high current capability, it can be used in battery management systems to help manage and control the battery charging and discharging process.

5. **Low voltage disconnect switch:** Suitable for circuits that require a low voltage disconnect switch with a low gate threshold voltage.

Through these features, TM3401GN-VB can be widely used in various electronic devices and modules that require P-Channel field-effect transistors, providing stable and efficient performance.