Model: SI2303ADS-T1-E3-VB

Silk screen: VB2355

Brand: VBsemi

**Parameter description:**
- Package type: SOT23-3
- Channel type: P-Channel
- Rated channel voltage (VDS): -30V
- Rated channel current (ID): -5.6A
- Static drain-source resistance (RDS(ON)): 47mΩ @ VGS=10V, VGS=20V
- Threshold voltage (Vth): -1V

**Package:**
SOT23-3

**Application introduction:**
SI2303ADS-T1-E3-VB is a P-Channel field effect transistor (FET) suitable for SOT23-3 package. Its main features include low drain-source resistance and suitable for applications such as load switches.

**Fields and module applications:**
1. **Power management module:** Due to its P-Channel channel type and moderate current capability, SI2303ADS-T1-E3-VB can be used for load switches in power management modules to achieve effective power control.

2. **Current control module:** Suitable for current control modules that require P-Channel MOSFETs, such as current sources and current mirrors.

3. **General amplifier module:** This device may also play a role in general amplifier circuits that require P-Channel MOSFETs.

Please note that specific application needs and design requirements may require detailed circuit design and parameter matching. Please carefully read the data sheet and application guide of the model before use.