**VBsemi 2309GN-VB transistor parameter description:**

- **Model:** 2309GN-VB
- **Silkscreen:** VB2355
- **Brand:** VBsemi
- **Package:** SOT23-3

**Parameters:**
- **Channel type:** P-Channel
- **Maximum drain-source voltage (VDS):** -30V
- **Maximum drain current (ID):** -5.6A
- **On-resistance (RDS(ON)):** 47mΩ @ VGS=10V, VGS=20V
- **Threshold voltage (Vth):** -1V

**Application introduction:**
VBsemi 2309GN-VB is a P-Channel transistor in SOT23-3 package with low on-resistance and high performance, suitable for a variety of electronic applications.

**Main application areas:**
1. **Power management module:** Used in power management systems to provide reliable power control and current regulation.
2. **Motor drive:** Suitable for motor drive circuits to provide efficient power control and current management.
3. **DC-DC converter:** Plays a key role in DC-DC converters to help achieve efficient power conversion.
4. **Current control module:** Used to achieve precise control of current, suitable for various current control scenarios.

**Advantages and features:**
- High drain-source voltage, suitable for high voltage tasks.
- Low on-resistance, which helps improve overall efficiency.
- Suitable for power, motor and control modules that require P-Channel transistors.