**CES2313A-VB Detailed Specifications:**

- **Silkscreen:** VB2355
- **Brand:** VBsemi
- **Parameters:**
- Package: SOT23-3
- Channel type: P-Channel
- Drain-Source Voltage (V_DS): -30V
- Drain Current (I_D): -5.6A
- On-state Resistance (R_DS(ON)): 47mΩ @ V_GS=10V, V_GS=20V
- Threshold Voltage (V_th): -1V

**Application Introduction:**
This SOT23-3 packaged P-Channel The MOSFET (CES2313A-VB) is suitable for a variety of applications, including but not limited to:

1. **Power Management Modules:**
- Due to its P-Channel nature and low on-state resistance, it is well suited for power management modules, where efficient switching and control are critical.

2. **Battery Protection Circuits:**
- This MOSFET can be used in battery protection circuits to reliably control the charging and discharging process.

3. **Voltage Regulation Modules:**
- Suitable for voltage regulation modules due to its characteristics, which contribute to stable and efficient voltage control.

4. **Portable Electronic Devices:**
- Considering the compact size of the SOT23-3 package, this MOSFET is suitable for a variety of portable electronic devices, where space is a critical factor.

5. **Automotive Electronics:**
- Applications in automotive electronics, such as in control modules or voltage regulation within vehicle systems.

**NOTE: ** Always refer to the manufacturer's datasheets and application notes for accurate details and usage guidelines.