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2SJ486ZU-TL-E-VB is a SOT23-3 packaged P-MOS tube Datasheet parameter video expl
Model: 2SJ486ZU-TL-E-VB
Silkscreen: VB2355
Brand: VBsemi
Package: SOT23-3

Parameters:
- Channel type: P-Channel
- Maximum drain voltage: -30V
- Maximum drain current: -5.6A
- Static drain-source resistance: RDS(ON) = 47mΩ @ VGS=10V, VGS=20V
- Threshold voltage: Vth = -1V

Application introduction:
This device is suitable for various power management and switching circuits. Due to its P-Channel channel type and low drain-source resistance, it is particularly suitable for applications requiring high performance and low power consumption. Common application areas include power inverters, power switches, power management modules, etc.

Detailed parameter description:
- Channel type: P-Channel, suitable for load switching and power management.
- Maximum drain voltage: -30V, ensuring reliable operation within a certain voltage range.
- Maximum drain current: -5.6A, suitable for medium power power management needs.
- Static drain-source resistance: RDS(ON) = 47mΩ @ VGS=10V, VGS=20V, low on-resistance ensures efficient energy conversion.
- Threshold voltage: Vth = -1V, ensuring operation under appropriate voltage conditions.

Application areas:
1. Power inverter: used to convert DC power to AC power, suitable for solar inverters, etc.
2. Power switch: in the power management circuit, used as a load switch to control the current flow.
3. Power management module: in occasions where efficient and reliable power management is required, such as power tools, wireless communication equipment, etc.

The features of this device make it an ideal choice for various power management modules, providing high-performance and stable power solutions for applications.

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