**Product model: ** B3E-VB
**Silk screen: ** VB2355
**Brand: ** VBsemi
**Parameters: **
- Package type: SOT23-3
- Channel type: P-Channel
- Rated voltage: -30V
- Maximum current: -5.6A
- On-resistance (RDS(ON)): 47mΩ @ VGS=10V, VGS=20V
- Threshold voltage (Vth): -1V

**Application introduction: **
B3E-VB is a P-Channel field effect transistor in SOT23-3 package. It has the characteristics of rated voltage of -30V, maximum current of -5.6A, and on-resistance of 47mΩ. The threshold voltage is -1V, suitable for various electronic devices and modules.

**Application fields:**
1. **Power management module:** Due to its P-Channel design, B3E-VB is suitable for power management modules, which can effectively control current and voltage and improve power efficiency.

2. **Signal amplifier:** In some signal amplifier circuits, B3E-VB can be used as a switching element to adjust the degree of signal amplification.

3. **Power switch module:** Due to its performance in load current and power supply voltage, it can be applied to power switch modules to achieve efficient power control.

4. **Drive module:** As a field effect transistor, B3E-VB can also be used in various drive modules to ensure efficient and reliable operation of the module.

In general, B3E-VB is suitable for electronic modules that require P-Channel field effect transistors, and is widely used in power management, signal processing, drive control and other fields.