**AP2329GN-VB**

- **Silkscreen: ** VB2355
- **Brand: ** VBsemi
- **Parameters: **
- Package: SOT23-3
- Polarity: P—Channel
- Rated voltage: -30V
- Rated current: -5.6A
- Switch resistance: RDS(ON)=47mΩ@VGS=10V,VGS=20V
- Threshold voltage: Vth=-1V

**Detailed parameter description: **
AP2329GN-VB is a P-Channel field effect transistor launched by VBsemi, using SOT23-3 package. With rated voltage -30V, rated current -5.6A, low switch resistance RDS(ON) of 47mΩ@VGS=10V and VGS=20V, threshold voltage Vth of -1V. Suitable for various electronic design needs.

**Application Introduction:**
AP2329GN-VB is widely used in the electronics field, especially for:
- **Power management module:** In the power management circuit, AP2329GN-VB can be used to achieve efficient power switch control and provide reliable current and voltage regulation.
- **Power inverter:** Due to its superior voltage and current characteristics, AP2329GN-VB can be used in power inverters to improve the energy efficiency and performance of the system.
- **Drive circuit:** As a P-Channel field effect transistor, it is suitable for various drive circuits and can provide high-efficiency drive under low voltage and low power consumption conditions.

**Application fields:**
1. **Consumer electronics:** Power management modules for electronic devices such as mobile phones and tablets.
2. **Industrial electronics:** Used for driving motors, inverters and other industrial electronic devices.
3. **Communication equipment:** Used for power amplification and signal processing modules.

AP2329GN-VB is a high-performance P-Channel field effect transistor that provides reliable solutions for various electronic applications.