2315GN-VB is a P-Channel field effect transistor of VBsemi brand, using SOT23-3 package. The following are detailed parameters and application introduction:

- **Parameter Description:**
- Rated voltage (VDS): -30V
- Rated current (ID): -5.6A
- On resistance (RDS(ON)): 47mΩ @ VGS=10V, VGS=20V
- Threshold voltage (Vth): -1V

- **Application Introduction:**
- Suitable for low voltage and medium power power management systems.
- Can be used in amplifiers, switching power supplies and regulators and other circuits.

- **Field and module application:**
- **Power management system:** Due to its low on resistance and appropriate current capacity in the low resistance state, it can be used as a switching device in the power management system.
- **Amplifier:** In the amplifier circuit, especially in the low voltage environment, it can be used for signal amplification.
- **Switching power supply:** Suitable for switching power supply modules, providing high-efficiency power conversion.
- **Regulator:** Can act as a control element in the voltage regulation circuit to help maintain a stable output voltage.

Please note that the specific application depends on the project requirements and design specifications. It is recommended to carefully read the data sheet before use.