LML5103G-VB is a P-Channel field effect transistor of VBsemi brand, in SOT23-3 package. The following are detailed parameters and application introduction:

- **Parameter Description:**
- Maximum withstand voltage: -30V
- Maximum drain current: -5.6A
- On-state drain-source resistance (RDS(ON)): 47mΩ @ VGS=10V, VGS=20V
- Threshold voltage (Vth): -1V

- **Application Introduction:**
- **Power Management:** Suitable for low voltage drop, high efficiency power management circuits.
- **Power Amplification:** Can be used for amplifiers and power amplifier modules.
- **Switching Power Supply:** Used to design switching power supplies and DC-DC converters.

- **Field and module application:**
- **Power module:** Due to its low drain resistance and high withstand voltage characteristics, it is suitable for power module design to improve efficiency.
- **Drive module:** Used for motor drive and other applications requiring high-efficiency power amplification.
- **Switching power supply control:** Used in switching power supplies to achieve stable current and voltage control.

LML5103G-VB is suitable for various application fields that require P-Channel MOSFETs, providing high performance and reliability.