Model: WPM3012-VB

Silkscreen: VB2355

Brand: VBsemi

Parameters:
- Package type: SOT23-3
- Channel type: P-Channel
- Rated voltage: -30V
- Rated current: -5.6A
- On-resistance: RDS(ON) = 47mΩ @ VGS=10V, VGS=20V
- Threshold voltage: Vth = -1V

Application Introduction:
WPM3012-VB is a P-Channel MOSFET in SOT23-3 package with a rated voltage of -30V and a rated current of -5.6A. Its low on-resistance (47mΩ @ VGS=10V, VGS=20V) and moderate threshold voltage (-1V) make it suitable for a variety of power management, power switching and amplification applications.

Detailed parameter description:
1. **Channel type:** P-Channel MOSFET, suitable for circuit design with load switching and power amplifier.
2. **Rated voltage:** -30V, suitable for applications with different power supply voltages.
3. **Rated current:** -5.6A, suitable for circuits with medium power requirements.
4. **On-resistance:** RDS(ON) = 47mΩ @ VGS=10V, VGS=20V, low on-resistance ensures high-efficiency power conversion.
5. **Threshold voltage:** Vth = -1V, providing reliable switching characteristics.

Application fields:
WPM3012-VB is suitable for the following fields:
1. **Power management module:** Used to build compact and efficient power management modules.
2. **Power switching device:** As a power switching device, it can be used in power conversion and amplifier design.
3. **Power switching module:** Used to build high-performance, energy-saving power switching modules.

The device can provide reliable performance in these fields, helping to optimize circuit design and improve system efficiency.