**UT2309G-AE3-R-VB**

- **Silkscreen:** VB2355
- **Brand:** VBsemi
- **Parameters:**
- Package type: SOT23-3
- Channel type: P—Channel
- Operating voltage: -30V
- Continuous drain current: -5.6A
- On-resistance: 47mΩ @ VGS=10V, VGS=20V
- Threshold voltage: Vth=-1V
- **Application introduction:**
UT2309G-AE3-R-VB is a high-performance P-Channel trench MOSFET designed for power management and switching power supply applications. Its low on-resistance and high drain current make it excellent in various power systems.

- **Application fields:**
1. **Power switch:** Suitable for various power switch circuits.
2. **Voltage regulator:** Provides efficient power control to ensure stable output voltage.
3. **DC-DC converter:** Used to achieve high-efficiency conversion between different voltages.
4. **Power management system:** Provides reliable solutions for power management.

- **Package:** SOT23-3

UT2309G-AE3-R-VB is widely used in power switches, voltage regulators, DC-DC converters and power management systems, providing efficient and reliable solutions for various application scenarios.