Model: UT3403G-AE3-R-VB
Silkscreen: VB2355
Brand: VBsemi
Package: SOT23-3

Parameters:
- Channel type: P-Channel
- Rated voltage: -30V
- Rated current: -5.6A
- On resistance: 47mΩ @ VGS=10V, VGS=20V
- Gate-source voltage threshold: Vth=-1V

Application introduction:
UT3403G-AE3-R-VB is a P-Channel MOSFET with excellent performance parameters, suitable for a variety of circuit designs and application scenarios. Its features include low voltage threshold, high rated current and low on resistance, providing reliable power control and management functions for electronic devices.

Detailed parameter description:
1. **Channel type**: P-Channel MOSFET, suitable for circuit design requiring P-type transmission conductors.
2. **Rated voltage**: -30V, suitable for circuit design of various power supplies and electronic equipment.
3. **Rated current**: -5.6A, with high current carrying capacity, suitable for scenarios that need to handle large currents.
4. **On-resistance**: 47mΩ @ VGS=10V, VGS=20V, low on-resistance helps reduce power loss and improve efficiency.
5. **Gate-source voltage threshold**: Vth=-1V, low voltage threshold enables it to perform well in low-voltage environments.

Application areas:
UT3403G-AE3-R-VB is suitable for a variety of fields, including but not limited to:
- **Power management module**: can be used for power switching, voltage stabilization and regulation circuits.
- **Power tools**: meet the needs of power tools for high current and voltage resistance.
- **Automotive electronics**: Suitable for power switching and current control in automotive electronic systems.
- **LED lighting**: Used in LED drive circuits to provide efficient current control.

Overall, the UT3403G-AE3-R-VB is an excellent MOSFET suitable for circuit design in multiple fields, providing reliable power control and management functions for electronic devices.