**NCE2321-VB**

- **Silkscreen:** VB2355
- **Brand:** VBsemi
- **Package:** SOT23-3

**Parameters:**
- **Channel type:** P—Channel
- **Maximum drain voltage (VDS):** -30V
- **Maximum drain current (ID):** -5.6A
- **On-resistance (RDS(ON)):** 47mΩ @ VGS=10V, VGS=20V
- **Threshold voltage (Vth):** -1V

**Application Introduction:**
NCE2321-VB is a P-Channel trench MOSFET with excellent characteristics suitable for a variety of applications. The following is a detailed parameter description and application introduction:

1. **Power module:** Suitable for power module design, capable of providing efficient and stable power output.

2. **Battery management:** In the battery protection circuit, it is used to manage the battery charging and discharging process to improve the battery life and safety.

3. **Switching power supply:** Can be used for switching power supply and switching circuit to achieve power conversion and power control.

4. **Lighting control:** In LED lighting systems, it can be used to adjust brightness and control power.

5. **Current control module:** Suitable for designing circuit modules that require precise current control.

6. **Power switch:** As a power switch element, it is used for input and output control of switching power supply.

**Note:** In specific design, it is necessary to carefully select working conditions and external components according to the application scenario and circuit parameters. Ensure that it meets the design requirements to achieve optimal performance and stability.