Model: SMG2307PE-VB
Silkscreen: VB2355
Brand: VBsemi
Package: SOT23-3

**Detailed parameter description:**
- Polarity: P-Channel
- Maximum drain voltage (Vds): -30V
- Maximum drain current (Id): -5.6A
- On-state drain resistance (RDS(ON)): 47mΩ @ VGS=10V, VGS=20V
- Threshold voltage (Vth): -1V

**Application introduction:**
SMG2307PE-VB is a P-Channel field effect transistor in SOT23-3 package. The device has a maximum drain current capability of -5.6A under a maximum drain voltage of -30V, and exhibits a low on-state drain resistance of 47mΩ under different gate-source voltages. Its threshold voltage is negative 1V.

**Application fields:**
Due to the performance parameters of SMG2307PE-VB, it may be widely used in the following fields:

1. **Power switch module:** Suitable for power management circuits, including switching power supplies, power adapters, and battery management.

2. **Current regulation module:** Can be used for current regulators and current limiters to ensure current stability and controllability.

3. **Signal amplifier module:** Due to its P-Channel polarity, it is suitable for signal amplifier circuits that require P-Channel MOSFET.

4. **Power inverter:** In power inverters that require inverter function, SMG2307PE-VB can be used to control the switching and inversion of the power supply.

These application scenarios are only examples, and the specific use depends on the requirements of system design and the matching of performance parameters.