**NTR3162PT1G-VB Detailed parameter description:**

- **Brand:** VBsemi
- **Model:** NTR3162PT1G-VB
- **Silkscreen:** VB2355
- **Package:** SOT23-3
- **Channel type:** P—Channel
- **Maximum drain voltage:** -30V
- **Maximum drain current:** -5.6A
- **On-resistance (RDS(ON)):** 47mΩ @ VGS=10V, VGS=20V
- **Threshold voltage (Vth):** -1V

**Application introduction:**

NTR3162PT1G-VB is a P—Channel trench power MOSFET, suitable for a variety of application scenarios.

**Main Features:**
- High Performance: With low on-resistance and high drain current, it is suitable for circuit design requiring high performance.
- Low Threshold Voltage: The threshold voltage is -1V, which helps to achieve flexible circuit design under low voltage conditions.
- Compact Package: Adopts SOT23-3 package, which is suitable for applications with space constraints.

**Application Areas:**
1. **Power Management Module:**
- Used to build efficient and compact power management modules to provide reliable power conversion and regulation.

2. **Drive Circuit:**
- As part of the driver or switch in the circuit, it realizes fast and reliable circuit switching.

3. **Motor Drive:**
- Suitable for motor control and drive modules to provide precise control of the motor.

4. **Battery Protection:**
- In the battery management circuit, it is used to implement over-current and over-voltage protection.

5. **LED driver:**
- Used for LED driver circuit to ensure stable brightness and efficiency.

Please select NTR3162PT1G-VB reasonably according to specific application needs and circuit design requirements to obtain the best performance.