**2323GN-VB Detailed parameter description:**
- **Brand:** VBsemi
- **Model:** 2323GN-VB
- **Silkscreen:** VB2355
- **Package:** SOT23-3

**Electrical parameters:**
- **Channel type:** P-Channel
- **Maximum leakage current:** -5.6A
- **Drain-source voltage:** -30V
- **On-resistance（RDS(ON)）：** 47mΩ @ VGS=10V, VGS=20V
- **Threshold voltage（Vth）：** -1V

**Packaging information:**
- **Package type:** SOT23-3

**Application introduction:**
2323GN-VB is a P-Channel power field effect transistor launched by VBsemi brand. It has excellent electrical performance and is suitable for a variety of electronic application scenarios.

**Main application areas:**
1. **Power module:** Suitable for power switching circuits in power modules, can be used to design compact and high-efficiency power solutions.

2. **Power management:** In the field of power management, it can be applied to power management circuits such as switching regulators and DC-DC converters.

3. **Communication equipment:** Due to its characteristics, it can be used as a power switching element in communication equipment for signal amplification and power supply regulation.

4. **Industrial control:** In industrial control systems, it can be used for motor drives, switching power supplies and other high-performance power control applications.

**Note:** Before use, please read the relevant data sheets and specifications carefully to ensure the suitability of the product in a specific application.