**VBsemi 2327GN-HF-VB**

- **Parameter Description:**
- Type: P—Channel MOSFET
- Rated voltage (V_DS): -30V
- Rated current (I_D): -5.6A
- Static resistance (RDS(ON)): 47mΩ @ VGS=10V, VGS=20V
- Threshold voltage (Vth): -1V

- **Package:**
- Type: SOT23-3

- **Application Introduction:**
- High-performance P—Channel MOSFET, designed for applications requiring high power density and low on-resistance.

- **Application fields:**
- Power modules
- Battery management systems
- Motor controllers
- Automotive electronics

- **Features:**
- Excellent conduction characteristics
- Suitable for high power density design
- SOT23-3 package is suitable for small electronic devices

*Note: The above information is for reference only. Specific applications need to be considered according to system requirements and design. *