VBsemi UT2305L-AE3-R-VB is a P-Channel MOSFET chip with the following key parameters and features:

- Rated voltage (VDS): -30V
- Rated current (ID): -5.6A
- Switch resistance (RDS(ON)): 47mΩ (at VGS=10V and VGS=20V)
- Threshold voltage (Vth): -1V

**Package:** SOT23-3

**Application introduction:**
UT2305L-AE3-R-VB is suitable for circuit and module design requiring P-Channel MOSFET. Due to its efficient switching performance and low resistance characteristics, it is widely used in the following fields and modules:

1. **Power management:** Used in power switching and regulation circuits to provide efficient power conversion.
2. **Motor drive:** As a switching element in the motor drive circuit, it controls the operation and speed of the motor.
3. **LED lighting:** In the LED drive circuit, efficient lighting is achieved by controlling the current.
4. **Automotive electronics:** Used in automotive electronic systems such as engine control units (ECUs) and lighting controls.

**Advantages:**
- High energy efficiency: low switch resistance and low threshold voltage.
- Suitable for a variety of power and motor applications.
- Compact package, suitable for space-constrained designs.

Overall, the UT2305L-AE3-R-VB is a versatile P-channel MOSFET suitable for a variety of applications, providing high performance and reliability for circuit design.