VBsemi UT2305G-AE3-R-VB is a P-channel field effect transistor. The following are detailed parameters and application introduction:

- **Parameter Description:**
- Package: SOT23-3
- Polarity: P-Channel
- Rated voltage: -30V
- Rated current: -5.6A
- RDS(ON): 47mΩ @ VGS=10V, VGS=20V
- Threshold voltage (Vth): -1V

- **Application Introduction:**
- UT2305G-AE3-R-VB is suitable for circuit applications that require P-channel MOSFET.
- Typical applications include power management, DC-DC converters, battery protection, and other fields that require high-performance P-channel MOSFET.

- **Application areas:**
- Power management systems
- Battery protection circuits
- DC-DC converters

- **Module applications:**
- Used as switching elements in power modules.
- Used for battery protection in battery management modules.
- Used in DC-DC converter modules that require P-channel MOSFETs.

The device provides efficient current control and voltage regulation in the above applications and is suitable for a wide range of electronic devices and systems.