### SI2315DS-T1-GE3-VB

**Detailed parameter description:**
1. Product model: SI2315DS-T1-GE3-VB
2. Package type: SOT23-3
3. Channel type: P—Channel
4. Rated voltage: -30V
5. Rated current: -5.6A
6. On-resistance: 47mΩ @ VGS=10V, VGS=20V
7. Threshold voltage: Vth=-1V

**Application introduction:**
SI2315DS-T1-GE3-VB is a P—Channel field effect transistor in SOT23-3 package, which is popular for its low on-resistance and suitability for load switching.

**Fields and module applications:**
1. **Load switch:** Applicable to electronic devices and circuits that require reliable load switching to ensure efficient power control.
2. **Power management:** Play a role in power management modules, especially in low-power application scenarios that require P-Channel MOSFETs, such as power switches and circuit breakers.

Please note that the above are only examples, and specific applications and module selection may vary depending on specific design needs and circuit requirements. It is recommended to consult the product manual and specification sheet before use to ensure correct application and operation.