**SI2315BDS-T1-GE3-VB Detailed parameter description:**

- **Silk screen:** VB2355
- **Brand:** VBsemi
- **Parameters:**
- Package type: SOT23-3
- Channel type: P—Channel
- Rated voltage: -30V
- Rated current: -5.6A
- On-resistance: RDS(ON) = 47mΩ @ VGS=10V, VGS=20V
- Threshold voltage: Vth = -1V

- **Package:** SOT23-3

**Application Introduction:**

SI2315BDS-T1-GE3-VB is a P—Channel MOSFET in SOT23-3 package. Features low on-state resistance, suitable for -30V rated voltage and -5.6A rated current.

**Possible Applications:**

1. **Power Module:** Suitable for power switching power modules due to its low resistance and high voltage/current ratings.

2. **Power Management:** In battery management systems and power inverters, efficient power management can be achieved.

3. **Automotive Electronics:** Suitable for automotive electronic systems such as engine control units (ECUs), etc.

4. **LED Driver:** In LED lighting systems, it can be used for dimming and switch control.

Please make sure to read the product manual in detail before use to ensure correct application and performance.