SSM3J02F-VB
Model: SSM3J02F-VB

Silkscreen: VB2355

Brand: VBsemi

Parameters:

Package type: SOT23-3
Channel type: P—Channel
Rated voltage: -30V
Rated current: -5.6A
RDS(ON): 47mΩ @ VGS=10V, VGS=20V
Threshold voltage: Vth=-1V
Application introduction:

SSM3J02F-VB is a P—Channel field effect transistor in a SOT23-3 package with low on-resistance and characteristics suitable for applications such as load switches.

Detailed parameter description:

Package type: SOT23-3
Channel type: P-Channel
Rated voltage: -30V
Rated current: -5.6A
On-resistance: RDS(ON)=47mΩ @ VGS=10V, VGS=20V
Threshold voltage: Vth=-1V
Field and module application:

SSM3J02F-VB is suitable for various electronic devices and modules that require P-Channel trench field effect transistors, especially in the field of low voltage and low power consumption requirements. The following are some possible application scenarios:

Load switch: Due to its low on-resistance and P-Channel design, it is suitable for load switch circuits and can be used to control the load in the circuit.

Power management: In power management modules, especially where P-Channel MOSFETs are required, such as low voltage circuit breakers and power switches.