Product model: Si2399CDS-T1-GE3-VB
Silk screen: VB2355
Brand: VBsemi
Parameters: SOT23-3; P-Channel, -30V; -5.6A; RDS(ON)=47mΩ@VGS=10V, VGS=20V; Vth=-1V;
Package: SOT23-3

Detailed parameter description and application introduction:
Si2399CDS-T1-GE3-VB is a P-Channel MOSFET in SOT23-3 package. Its main parameters include maximum withstand voltage -30V, maximum drain current -5.6A, and drain-source resistance RDS(ON) of 47mΩ at VGS=10V and VGS=20V respectively. The threshold voltage Vth is -1V.

Application:
This product is suitable for circuit designs that require P-Channel MOSFET, especially in applications that require load current control. Common application areas include power management, switching power supplies, and power amplifiers.

Note: Before specific application, please read the product manual and specification carefully to ensure correct use and performance.