Product model: NCE3417-VB

**Silk screen: ** VB2355

**Brand: ** VBsemi

**Parameters: **
- Package type: SOT23-3
- Channel type: P—Channel
- Rated voltage: -30V
- Rated current: -5.6A
- On-resistance: RDS(ON) = 47mΩ @ VGS=10V, VGS=20V
- Threshold voltage: Vth = -1V

**Package: **
- Package type: SOT23-3

**Detailed parameter description and application introduction: **
NCE3417-VB is a P—Channel power field effect transistor with excellent electrical performance. Its main parameters include low threshold voltage, low on-resistance and high rated current, which are suitable for a variety of power management and switching circuit applications.

**Main application areas:**
1. **Power management module:** Due to its low on-resistance and moderate rated voltage, NCE3417-VB can be widely used in power management modules to improve efficiency and stability.

2. **Switching circuit:** The device is suitable for various switching circuits, such as DC-DC converters, to achieve efficient conversion and regulation of electric energy.

3. **Current control module:** In areas where precise control of current is required, NCE3417-VB can be used to design current control modules to ensure system stability and accuracy.

**Features:**
- Suitable for low voltage and high current applications
- Low on-resistance and high efficiency
- Compact package, suitable for designs with space constraints

The above is a detailed parameter description and application introduction of NCE3417-VB. According to its characteristics and performance, this product can be widely used in power management, switching circuits and current control and other fields, providing efficient and stable performance support for related modules.