**SQ2303ES-T1-GE3-VB Detailed parameter description:**

- **Brand:** VBsemi
- **Model:** SQ2303ES-T1-GE3-VB
- **Silkscreen:** VB2355
- **Package:** SOT23-3
- **Type:** P-Channel trench MOSFET
- **Voltage level:** -30V
- **Current level:** -5.6A
- **On-resistance (RDS(ON)):** 47mΩ @ VGS=10V, VGS=20V
- **Gate-source voltage threshold (Vth):** -1V

**Application introduction:**

SQ2303ES-T1-GE3-VB is a P-Channel in SOT23-3 package Channel MOSFET. With negative voltage (-30V) and medium current capacity (-5.6A), it is suitable for low-power electronic modules.

**Application areas:**

1. **Power module:** Used for low-power power switch, such as portable electronic devices.

2. **Battery management:** In the battery protection circuit, realize the switch control of the battery.

3. **Low-power switching circuit:** Suitable for low-power switching circuits such as switching power supplies and inverters.

**Function:**

- Provide low-power power switch.
- Realize the switch control of the battery in the battery management circuit.
- Used for low-power switching circuits, supporting switching power supplies and inverters.

The above is a brief description. The specific design and application need to be carried out according to the specific module and circuit requirements.