**MTP2305N3-VB**

- **Silkscreen: ** VB2355
- **Brand: ** VBsemi
- **Parameters: **
- Package: SOT23-3
- Channel type: P—Channel
- Maximum channel voltage (VDS): -30V
- Maximum drain current (ID): -5.6A
- Static drain-source resistance (RDS(ON)): 47mΩ @ VGS=10V, VGS=20V
- Threshold voltage (Vth): -1V

**Detailed parameter description: **
MTP2305N3-VB is a P—Channel MOSFET, packaged in SOT23-3, with a maximum channel voltage of -30V and a maximum drain current of -5.6A. Its static drain-source resistance is 47mΩ and the threshold voltage is -1V.

**Application Introduction:**
MTP2305N3-VB is suitable for low-power power electronic applications, especially where P-Channel MOSFET is required.

**Field Module Application:**
1. **Power Management Module:** In the power management module, MTP2305N3-VB can be used for power switching to help manage power supply and control power.
2. **Signal Switching Module:** Used to achieve signal switching control, suitable for low-power electronic devices that require P-Channel MOSFET.
3. **Current Control Module:** Used in modules that require P-Channel MOSFET for current control, such as battery charge and discharge control.

**Function:**
- Used for power switching of low-power electronic devices.
- Realize signal switching control.
- Perform current control in the current control module.

**Precautions for use:**
1. Follow the maximum ratings in the data sheet to ensure use under specified conditions.
2. Pay attention to the negative value of the threshold voltage to ensure operation under the correct voltage conditions.
3. Understand and meet the specific requirements of the package to ensure correct pin connection.
4. Consider heat dissipation to ensure that the device operates within a safe temperature range.