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SI2343DS-T1-GE3-VB is a SOT23-3 packaged P-MOS tube Datasheet parameter video ex
**Detailed parameter description:**
- Model: SI2343DS-T1-GE3-VB
- Silkscreen: VB2355
- Brand: VBsemi
- Package: SOT23-3
- Type: P-Channel
- Rated voltage: -30V
- Rated current: -5.6A
- On-resistance: 47mΩ @ VGS=10V, VGS=20V
- Threshold voltage: -1V

**Application introduction:**
This is a P-Channel power field effect transistor (Power MOSFET) for SOT23-3 package. Its features include -30V rated voltage, -5.6A rated current, relatively low on-resistance, etc., making it suitable for low-power power electronics applications.

**Application fields:**
This device is commonly used in modules in the fields of low-power power switching, signal amplification, current control, etc. In these modules, it can be used for low-power switch regulation, small signal amplification and current control.

**Function:**
- In low-power power switch modules, it can be used for low-power switching power regulation and control.
- In low-power signal amplification modules, it can be used for low-power signal amplification.
- In low-power current control modules, it can be used for low-power current control.

**Precautions for use:**
- Strictly operate in accordance with the maximum ratings provided in the data sheet to prevent device damage.
- Pay attention to the electrostatic sensitivity of the device and take appropriate protective measures.
- Consider heat dissipation and temperature management in the design to ensure that the device is within the normal operating temperature range.
- Follow appropriate welding and installation standards to ensure reliable electrical connections and mechanical strength.

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