Product Introduction: CMN2308S-VB is a high-performance N-channel MOSFET with low on-resistance and high leakage current carrying capacity, suitable for various occasions requiring high-performance N-channel MOSFET. Detailed parameter description: 1. Rated parameters: - Rated voltage: 60V - Maximum continuous leakage current: 4A - On-resistance: 75mΩ@VGS=10V, 86mΩ@VGS=4.5V 2. Electrical characteristics: - Maximum gate-source voltage: ±20V - Gate threshold voltage: 1.7V 3. Package information: - Package type: SOT23-3
The main parameters are as follows: - Rated voltage: 60V - Maximum continuous leakage current: 4A - On-resistance: 75mΩ at VGS=10V, 86mΩ at VGS=4.5V - Maximum gate-source voltage: ±20V - Gate threshold voltage: 1.7V The package is SOT23-3.
Examples of applicable fields and modules: CMN2308S-VB is applicable to a variety of fields and modules, including but not limited to: 1. Power management module: used for power switch and current control in low-voltage power supply systems. 2. Motor drive module: applicable to motor drive systems that need to control motor speed and direction. 3. Lighting control module: used for power switch and current control in LED lighting systems. 4. Battery management module: applicable to battery management systems that need to control battery charging and discharging. The above are just examples. CMN2308S-VB can also be used in other fields and modules that require N-channel MOSFET.
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