### Product Introduction VBsemi CMN2308M-VB is an N-channel MOSFET suitable for applications with low voltage drop and high switching speed. Its key features include low on-resistance and low gate charge, making it suitable for power management and switching applications that require high efficiency and high performance.
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### Detailed parameter description - **Package type**: SOT23-3 - **Channel type**: N-channel - **Maximum withstand voltage**: 60V - **Maximum continuous leakage current**: 4A - **On-resistance**: 75mΩ (at VGS=10V), 86mΩ (at VGS=4.5V) - **Gate-source voltage**: ±20V - **Threshold voltage**: 1.7V
### Applications and Module Examples 1. **Power Management Module**: The CMN2308M-VB is suitable for low-dropout, high-efficiency DC-DC converters, such as notebook computer adapters and power management modules for portable electronic devices. 2. **Motor Drive**: Due to its low on-resistance and high switching speed, the CMN2308M-VB can be used to drive small DC motors, such as motor drivers for robots and drones. 3. **LED Lighting**: In LED lighting applications, the CMN2308M-VB can be used as an LED driver for high efficiency and precise brightness control. 4. **Battery Management**: The CMN2308M-VB can be used as a power switch in a battery management system to achieve precise control of battery charging and discharging. The above is a product introduction, detailed parameter description, application areas and module examples for the VBsemi CMN2308M-VB MOSFET.
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