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VBW1101N 产品详细

产品简介:

VBW1101N is a single N-type field effect transistor (FET) launched by VBsemi, which adopts Trench technology and has high performance and reliability. It is suitable for various high-power power management and power control applications, providing reliable power conversion and stability Current driving capabilities. Such as industrial power supplies, motor drives, high-performance power modules, etc.

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产品参数:

**parameter:**
- **Type:** Single N type
- **Maximum Drain-Source Voltage (VDS):** 100V
- **Maximum Gate-Source Voltage (VGS):** ㊣20V
- **Threshold Voltage (Vth):** 2.5V
- **On-resistance (m次) at VGS=4.5V:** 10m次
- **On-resistance (m次) at VGS=10V:** 9m次
- **Maximum drain current (ID):** 100A
- **Technology:** Trench
- **Package:** TO3P

领域和模块应用:

**Examples of application areas:**
1. **Power inverter:** VBW1101N can be used to manufacture high-power power inverter to convert DC power into AC power, suitable for industrial power supply, UPS (uninterruptible power supply) and other applications.
2. **Industrial motor drive:** In industrial motor drive systems, this transistor can be used in high-power motor drivers to achieve high-efficiency and stable motor control.
3. **High-performance power module:** In the high-performance power module, VBW1101N can be used as a switching tube to achieve high-frequency power conversion and stable output.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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