VBTA5220N - VBsemi MOS管制造商

VBTA5220N 产品详细

描述
参数
应用
技术支持

产品简介：

Product introduction:
VBsemi's VBTA5220N is a dual N-type and P-type field effect transistor with a drain-source voltage (VDS) of ±20V, a gate-source voltage (VGS) of 12V, and a threshold voltage of 1.0/-1.2V (Vth), and 0.6/-0.3A drain current (ID). Manufactured using Trench technology and packaged as SC75-6.

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产品参数：

Detailed parameter description:
- Brand: VBsemi
- Product model: VBTA5220N
- Type: Dual N-type and P-type field effect transistors
- VDS (drain-source voltage): ㊣20V
- VGS (gate-source voltage): 12V
- Vth (threshold voltage): 1.0/-1.2V
- RDS(on) On-resistance at VGS=2.5V: 410/840 m次
- RDS(on) On-resistance at VGS=4.5V: 270/660 m次
- Maximum drain current (ID): 0.6/-0.3A
- Technology: Trench
- Package: SC75-6

领域和模块应用：

Application examples:
1. Power management module: suitable for battery management and power switching in portable electronic devices.
2. DC-DC converter: used for high-efficiency power conditioning in power converters.
3. Photovoltaic inverter: suitable for inverter circuits in solar photovoltaic power generation systems.
4. Automotive electronic systems: used in power management and control units in automotive electronic systems.
5. Wireless communication equipment: suitable for power amplification and adjustment modules in wireless routers and base stations.

*请注意：以上只是示例应用场景，具体的应用取决于系统设计的要求和条件。在使用该器件时，请查阅其数据手册以获取详细的技术规格和特性

技术支持：

* 如果您对产品有任何问题，请填写表格提交，我们会24小时内回复您

MOSFET

VBTA5220N 产品详细

产品简介：

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产品参数：

领域和模块应用：

技术支持：

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