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VBTA3230NS 产品详细

产品简介:

VBTA3230NS is a dual N+N type MOSFET with 20V drain-source voltage (VDS), 20V gate-source voltage (VGS), 0.5~1.5V threshold voltage (Vth), 350mΩ (VGS =2.5V) and on-resistance (RDS(on)) of 300mΩ (VGS=4.5V), and a drain current (ID) of 0.6A. It is manufactured using Trench process and the package is SC75-6.

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产品参数:

parameter:
- Double N+N type
- VDS(V): 20
- VGS(㊣V): 20
- Vth(V): 0.5~1.5
- RDS(on) VGS=2.5V(m次): 350
- RDS(on) VGS=4.5V(m次): 300
- ID (A): 0.6
- Technology: Trench
Package: SC75-6

领域和模块应用:

Due to its small package and low drain current characteristics, VBTA3230NS is suitable for light load and low power application scenarios. For example,
In mobile devices, it can be used for power switches in battery management modules; in sensor circuits, it can be used as switch tubes in sensor signal conditioning circuits; in portable electronic products, it can be used for battery charge and discharge control in charge management modules. Its small package and low power consumption give it broad application potential in scenarios with limited space and energy consumption.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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