产品参数:
Product model: VBTA1290
Brand: VBsemi
parameter:
- Single N-channel MOSFET
- Maximum drain-source voltage (VDS): 20V
- Maximum gate-source voltage (VGS): ㊣12V
- Threshold voltage (Vth): 0.5~1.5V
- On-resistance (RDS(on)) at VGS=2.5V: 141 m次
- On-resistance (RDS(on)) at VGS=4.5V: 107 m次
- On-resistance (RDS(on)) at VGS=10V: 91 m次
- Maximum drain current (ID): 2A
- Technology: Trench
Package: SC75-3
领域和模块应用:
This MOSFET is suitable for many fields and modules, here are some examples:
1. Low-power electronic modules: Due to their low drain current and moderate on-resistance, they can be used in low-power electronic products such as portable electronic devices, smartphones, and tablets to achieve energy saving and extend battery life.
2. Environmentally friendly and energy-saving module: suitable for environmentally friendly and energy-saving products such as energy-saving lamps, lighting systems and solar photovoltaic inverters, which can achieve efficient power conversion and energy utilization, and reduce energy consumption and carbon emissions.
3. Control module: suitable for various control modules, such as switch controllers, power management modules and motor drivers, etc., to achieve precise control and stable working performance.
4. Signal amplification module: In signal amplification and processing circuits, the MOSFET can be used in signal amplifiers, filters, and sensor interface circuits to provide high-quality signal amplification and transmission.
5. Power inverter module: It is suitable for power inverter modules such as inverter power supplies and DC-AC inverters to achieve efficient conversion and stable output of electric energy. It is widely used in household appliances, industrial equipment, automotive electronics and other fields.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性