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VBGQT1400 产品详细

产品简介:

VBsemi's VBGQT1400 is a single N-type MOSFET designed for various high-power and high-efficiency applications, particularly in areas such as power management, electric vehicles, and industrial control.

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产品参数:

- Drain-Source Voltage (VDS): 40V
- Gate-Source Voltage (VGS): ±20V
- Threshold Voltage (Vth): 3V
- On-Resistance at VGS=10V: 0.63mΩ
- Maximum Drain Current (ID): 350A
- Technology: SGT (Super Junction MOSFET)
- Package: TOLL

领域和模块应用:


Here are some example application scenarios and corresponding modules:

1. Electric Vehicle Drive Module:
The high current and low on-resistance of VBGQT1400 make it highly suitable for use in motor drive modules for electric vehicles. It can assist in achieving efficient energy conversion and provide sufficient power output to meet the propulsion needs of electric vehicles.

2. Industrial Power Supply Module:
In the field of industrial control, VBGQT1400 can be utilized to design high-performance industrial power supply modules for driving various industrial equipment and machinery. Its high voltage and current capabilities enable it to handle large capacity loads while maintaining stable power outputs.

3. Power Electronic Converter Module:
This MOSFET is also applicable for various power electronic converter modules, such as DC-DC converters, DC-AC inverters, etc. Its low on-resistance and high drain current capability contribute to improving conversion efficiency and reducing energy losses.

In summary, VBGQT1400 is suitable for applications requiring high power, efficiency, and reliability, particularly in the fields of electric vehicles, industrial control, and power electronics.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

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* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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